2N2444

SKU: 2N2444

2N2444 Transistor Germanium PNP CASE: TO3 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	USA Make
Vbr CBO	80
Vbr CEO	80
Max. PD (W)	85
Max. hFE	120
Min hFE	90
Ic Max. (A)	10
@Ic (test) (A)	3.0
Icbo Max. @Vcb Max. (A)	20m
Polarity	PNP
R(sat) (Û)	200m
Derate Above 25°C	1.0
Trans. Freq (Hz) Min.	4.5M
Oper. Temp (°C) Max.	125#
@VCE (V)	2.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	85 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	1 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	100 °C
Transition Frequency (ft):	4.5 MHz
Forward Current Transfer Ratio (hFE), MIN	90
SKU	775936

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