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2N2447
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2N2447

SKU: 2N2447
2N2447 Transistor Germanium PNP CASE: U8 MAKE: Raytheon Semiconductor
Product specifications
Type Transistor Germanium PNP
Case U8
Manufacturer Raytheon Semiconductor
Vbr CBO 45
Vbr CEO 24
Max. PD (W) 75m
Derate (Amb) (W/°C) 1.3m
hfe 65
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Trans. Freq (Hz) Min. 1.0M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 100
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.075 W
Maximum Collector-Base Voltage |Vcb| 45 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 85 °C
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 775934
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