2N2450

SKU: 2N2450

2N2450 Transistor Germanium PNP CASE: U9 MAKE: Raytheon Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	U9
Manufacturer	Raytheon Semiconductor
Vbr CBO	35
Vbr CEO	20
Max. PD (W)	75m
Derate (Amb) (W/°C)	1.3m
hfe	125
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	10u
Polarity	PNP
Trans. Freq (Hz) Min.	1.2M
@VCE (test) (V)	6.0
Oper. Temp (°C) Max.	100
@Ic (A)	1.0m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.075 W
Maximum Collector-Base Voltage \|Vcb\|	35 V
Maximum Collector-Emitter Voltage \|Vce\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	12 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	85 °C
Collector Capacitance (Cc)	10 pF
Transition Frequency (ft):	1 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	775930

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