2N2527

SKU: 2N2527

2N2527 Transistor Germanium PNP CASE: TO3 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	Generic
Vbr CBO	120
Vbr CEO	120
Max. PD (W)	85
t(f) Max. (S)	4.0u
Max. hFE	50
Min hFE	20
Ic Max. (A)	10
@Ic (test) (A)	3.0
Icbo Max. @Vcb Max. (A)	3.0m
Polarity	PNP
Tr Max. (s)	10u
R(sat) (Û)	80m
Derate Above 25°C	1.0
Oper. Temp (°C) Max.	125#
@VCE (V)	2.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	85 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	110 °C
Transition Frequency (ft):	0.3 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	605974

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