2N2528

SKU: 2N2528

2N2528 Transistor Germanium PNP CASE: TO3 MAKE: Generic

Datasheet

2N2528 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	GPD Optoelectronic Devices
Vbr CBO	160
Vbr CEO	160
Max. PD (W)	85
t(f) Max. (S)	4.0u
Max. hFE	50
Min hFE	20
Ic Max. (A)	10
@Ic (test) (A)	3.0
Icbo Max. @Vcb Max. (A)	3.0m
Polarity	PNP
Tr Max. (s)	10u
R(sat) (Û)	80m
Derate Above 25°C	1.0
Oper. Temp (°C) Max.	125#
@VCE (V)	2.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	85 W
Maximum Collector-Base Voltage \|Vcb\|	160 V
Maximum Collector-Emitter Voltage \|Vce\|	160 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	110 °C
Transition Frequency (ft):	0.3 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	775859

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