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2N2535
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2N2535

SKU: 2N2535
2N2535 Transistor Germanium PNP CASE: TO59 MAKE: Harris Semiconductor
Product specifications
Type Transistor Germanium PNP
Case TO59
Manufacturer Harris Semiconductor
Vbr CBO 60
Vbr CEO 30
Max. PD (W) 1.0
t(f) Max. (S) 5.0u
Max. hFE 120
Min hFE 40
Ic Max. (A) 3.0
@Ic (test) (A) 400m
Icbo Max. @Vcb Max. (A) 250u
Polarity PNP
Tr Max. (s) 12u
R(sat) (Û) 500m
Derate Above 25°C 133m
Trans. Freq (Hz) Min. 8.0k
Oper. Temp (°C) Max. 100#
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 100 °C
Transition Frequency (ft): 0.08 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 565536
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