2N2555
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2N2555

SKU: 2N2555
2N2555 Transistor Germanium PNP CASE: MT27 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case MT27
Manufacturer Generic
Vbr CBO 100
Vbr CEO 60
Max. PD (W) 20
Max. hFE 60
Min hFE 20
Ic Max. (A) 3.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 125u
Polarity PNP
R(sat) (Û) 250m
Derate Above 25°C 267m
Oper. Temp (°C) Max. 100#
@VCE (V) .50
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 20 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 100 °C
Transition Frequency (ft): 0.22 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 775838
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