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2N2580M
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2N2580M

SKU: 2N2580M
2N2580M Transistor Silicon NPN CASE: TO36 MAKE: Generic
Product specifications
Equivalent 2N2580
Type Transistor Silicon NPN
Case TO36
Manufacturer Generic
Vbr CBO 400
Vbr CEO 400
Max. PD (W) 150
t(f) Max. (S) 3.2u+
Max. hFE 40
Min hFE 10
Ic Max. (A) 10
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 5.0m
Polarity NPN
Tr Max. (s) 1500n
R(sat) (Û) 140m
Derate Above 25°C 1.4
Trans. Freq (Hz) Min. 2.0M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 150 W
Maximum Collector-Base Voltage |Vcb| 400 V
Maximum Collector-Emitter Voltage |Vce| 400 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 775807
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