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2N259
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2N259

SKU: 2N259
2N259 Transistor Silicon PNP CASE: TO5 MAKE: Raytheon Semiconductor
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer Raytheon Semiconductor
Vbr CBO 30
Vbr CEO 30
Max. PD (W) 250m
C(ob) (F) 40p
Derate (Amb) (W/°C) 2.0m
hfe 32
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 150
@Ic (A) 1.0m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 60 pF
Forward Current Transfer Ratio (hFE), MIN 35
SKU 565146
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