The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N2597
View detailed images (13)

2N2597

SKU: 2N2597
2N2597 Transistor Silicon PNP CASE: TO46 MAKE: USA Make
Product specifications
Type Transistor Silicon PNP
Case TO46
Manufacturer USA Make
Vbr CBO 80
Vbr CEO 60
Max. PD (W) 400m
C(ob) (F) 6.0p
Derate (Amb) (W/°C) 2.2m
hfe 60
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 25n
Polarity PNP
Trans. Freq (Hz) Min. 60M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 175
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 605985
Back