2N2600A

SKU: 2N2600A

2N2600A Transistor Silicon PNP CASE: TO46 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO46
Manufacturer	USA Make
Vbr CBO	125
Vbr CEO	100
Max. PD (W)	400m
C(ob) (F)	6.0p
Derate (Amb) (W/°C)	2.2m
hfe	80
Ic Max. (A)	50m
Icbo Max. @Vcb Max. (A)	25n
Polarity	PNP
Trans. Freq (Hz) Min.	60M
@VCE (test) (V)	5.0
Oper. Temp (°C) Max.	175
@Ic (A)	5.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.4 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	6 pF
Transition Frequency (ft):	30 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SKU	605988

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