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2N2612
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2N2612

SKU: 2N2612
2N2612 Transistor Germanium PNP CASE: TO3 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer USA Make
Vbr CBO 65
Vbr CEO 65
Max. PD (W) 75
Max. hFE 250
Min hFE 85
Ic Max. (A) 15
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 500m
Polarity PNP
R(sat) (Û) 1.0
Derate Above 25°C 1.0
Trans. Freq (Hz) Min. 2.0k
Oper. Temp (°C) Max. 100#
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 75 W
Maximum Collector-Base Voltage |Vcb| 65 V
Maximum Collector-Emitter Voltage |Vce| 65 V
Maximum Emitter-Base Voltage |Veb| 30 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 100 °C
Transition Frequency (ft): 0.02 MHz
Forward Current Transfer Ratio (hFE), MIN 85
SKU 368219
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