The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N2617

2N2617

SKU: 2N2617
2N2617 Transistor Silicon NPN CASE: TO40 MAKE: Philips
Product specifications
Type Transistor Silicon NPN
Case TO40
Manufacturer Philips
Vbr CBO 25
Vbr CEO 25
Max. PD (W) 250m
Derate (Amb) (W/°C) 2.0m
hfe 25
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 150
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 775778
Back