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2N2636
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2N2636

SKU: 2N2636
2N2636 Transistor Germanium PNP CASE: TO3 MAKE: USA Make
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer USA Make
Vbr CBO 100
Vbr CEO 60
Max. PD (W) 100
t(f) Max. (S) 4.0u
Max. hFE 80
Min hFE 20
Ic Max. (A) 25
@Ic (test) (A) 25
Icbo Max. @Vcb Max. (A) 10m
Polarity PNP
Tr Max. (s) 700n
R(sat) (Û) 26m
Derate Above 25°C 1.2
Oper. Temp (°C) Max. 125#
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 25 A
Max. Operating Junction Temperature (Tj) 100 °C
Transition Frequency (ft): 0.6 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 775760
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