2N266

SKU: 2N266

2N266 Transistor Germanium PNP CASE: R32 MAKE: General Electric

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	R32
Manufacturer	General Electric
Vbr CBO	18
Vbr CEO	18
Max. PD (W)	75m
C(ob) (F)	35p
Derate (Amb) (W/°C)	1.3m
Ic Max. (A)	200m
Icbo Max. @Vcb Max. (A)	16u
Polarity	PNP
Trans. Freq (Hz) Min.	800k
Oper. Temp (°C) Max.	60
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.075 W
Maximum Collector-Base Voltage \|Vcb\|	18 V
Maximum Collector-Emitter Voltage \|Vce\|	18 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	0.2 A
Max. Operating Junction Temperature (Tj)	75 °C
Collector Capacitance (Cc)	35 pF
Transition Frequency (ft):	0.4 MHz
Forward Current Transfer Ratio (hFE), MIN	25
SKU	775740

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