2N2669
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2N2669

SKU: 2N2669
2N2669 Transistor Germanium PNP CASE: MT27 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case MT27
Manufacturer Generic
Vbr CBO 70
Vbr CEO 70
Max. PD (W) 15
Max. hFE 150
Min hFE 50
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 600u
Polarity PNP
R(sat) (Û) 400m
Derate Above 25°C 200m
Oper. Temp (°C) Max. 100#
@VCE (V) .50
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 15 W
Maximum Collector-Base Voltage |Vcb| 70 V
Maximum Collector-Emitter Voltage |Vce| 70 V
Maximum Emitter-Base Voltage |Veb| 20 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 100 °C
Forward Current Transfer Ratio (hFE), MIN 50
SKU 775735
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