2N2670
View detailed images (1)

2N2670

SKU: 2N2670
2N2670 Transistor Germanium PNP CASE: MT27 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case MT27
Manufacturer Generic
Vbr CBO 90
Vbr CEO 90
Max. PD (W) 15
Max. hFE 150
Min hFE 50
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 600u
Polarity PNP
R(sat) (Û) 400m
Derate Above 25°C 200m
Oper. Temp (°C) Max. 100#
@VCE (V) .50
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 15 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 20 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 100 °C
Forward Current Transfer Ratio (hFE), MIN 50
SKU 775734
Back