2N269

2N269

SKU: 2N269
2N269 Transistor Germanium PNP CASE: TO1 MAKE: Generic
Product specifications
Equivalent 2N269A
Type Transistor Germanium PNP
Case TO1
Manufacturer Generic
Vbr CBO 25
Vbr CEO 24
Max. PD (W) 120m
C(ob) (F) 20p
Derate (Amb) (W/°C) 2.8m
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 5.0u
Polarity PNP
Trans. Freq (Hz) Min. 4.0M
Oper. Temp (°C) Max. 85
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.12 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 9 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 85 °C
Collector Capacitance (Cc) 30 pF
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 605997
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