2N2691

SKU: 2N2691

2N2691 Transistor Germanium PNP CASE: TO3 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO3
Manufacturer	USA Make
Vbr CBO	100
Vbr CEO	80
Max. PD (W)	100
t(f) Max. (S)	3.0u
Max. hFE	100
Min hFE	30
Ic Max. (A)	20
@Ic (test) (A)	20
Icbo Max. @Vcb Max. (A)	5.0m
Polarity	PNP
Tr Max. (s)	700u
R(sat) (Û)	32m
Derate Above 25°C	1.2
Trans. Freq (Hz) Min.	60k
Oper. Temp (°C) Max.	125#
@VCE (V)	1.5
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	1 V
Maximum Collector Current \|Ic max\|	20 A
Max. Operating Junction Temperature (Tj)	100 °C
Transition Frequency (ft):	0.06 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	775710

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