2N2696

2N2696

SKU: 2N2696
2N2696 Transistor Silicon PNP CASE: TO18 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO18
Manufacturer Generic
Vbr CBO 25
Vbr CEO 25
Max. PD (W) 360m
C(ob) (F) 20p
Derate (Amb) (W/°C) 2.0m
hfe 25
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 25n
Polarity PNP
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 175
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 116220
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