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2N2709
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2N2709

SKU: 2N2709
2N2709 Transistor Silicon PNP CASE: TO5 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer Generic
Vbr CBO 50
Vbr CEO 35
Max. PD (W) 240m
C(ob) (F) 110p
Derate (Amb) (W/°C) 1.8m
hfe 10
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
Trans. Freq (Hz) Min. .20M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 150
@Ic (A) .20m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.24 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 160 °C
Collector Capacitance (Cc) 110 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 775697
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