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2N2796
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2N2796

SKU: 2N2796
2N2796 Transistor Germanium PNP CASE: TO18 MAKE: International Devices
Product specifications
Type Transistor Germanium PNP
Case TO18
Manufacturer International Devices
Vbr CBO 20
Vbr CEO 12
Max. PD (W) 75m
C(ob) (F) 2.5p
Derate (Amb) (W/°C) 1.0m
hfe 60
Ic Max. (A) 100m
Polarity PNP
Trans. Freq (Hz) Min. 450M
@VCE (test) (V) .30
Oper. Temp (°C) Max. 100
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.075 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 12 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 100 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 300 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 544367
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