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2N2800S
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2N2800S

SKU: 2N2800S
2N2800S Transistor Silicon PNP CASE: TO39 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon PNP
Case TO39
Manufacturer Motorola Semiconductor
Vbr CBO 50
Vbr CEO 35
Max. PD (W) 800m
C(ob) (F) 25p
Derate (Amb) (W/°C) 4.5m
hfe 20
Ic Max. (A) 800m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 120M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 175
@Ic (A) 100u
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 25 pF
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 553934
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