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2N2801
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2N2801

SKU: 2N2801
2N2801 Transistor Silicon PNP CASE: TO5 MAKE: Generic
Datasheet
2N2801 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO5
Manufacturer New Jersey Semiconductor
Vbr CBO 50
Vbr CEO 35
Max. PD (W) 800m
C(ob) (F) 25p
Derate (Amb) (W/°C) 4.5m
hfe 30
Ic Max. (A) 800m
Icbo Max. @Vcb Max. (A) .10u
Polarity PNP
Trans. Freq (Hz) Min. 120M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 175
@Ic (A) .10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 25 pF
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN 75
SKU 775618
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