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2N2812
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2N2812

SKU: 2N2812
2N2812 Transistor Silicon NPN CASE: TO61 MAKE: USA Make
Product specifications
Type Transistor Silicon NPN
Case TO61
Manufacturer USA Make
Vbr CBO 80
Vbr CEO 60
Max. PD (W) 70
Max. hFE 120
Min hFE 40
Ic Max. (A) 10
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Tr Max. (s) 150n
R(sat) (Û) 100m
Derate Above 25°C 400m
Trans. Freq (Hz) Min. 15M
Oper. Temp (°C) Max. 175
@VCE (V) 5.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 70 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 775604
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