2N2855

SKU: 2N2855

2N2855 Transistor Silicon NPN CASE: TO62 MAKE: Generic

Datasheet

2N2855 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO62
Manufacturer	Central Semiconductor
Vbr CBO	60
Vbr CEO	40
Max. PD (W)	850m
C(ob) (F)	125p
Derate (Amb) (W/°C)	5.0m
hfe	40
Ic Max. (A)	3.0
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Trans. Freq (Hz) Min.	30M
@VCE (test) (V)	1.0
Oper. Temp (°C) Max.	175
@Ic (A)	1.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.85 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	125 pF
Transition Frequency (ft):	30 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	775556

Back