| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO5 |
| Manufacturer |
Motorola Semiconductor |
| Vbr CBO |
120 |
| Vbr CEO |
100 |
| Max. PD (W) |
600m |
| Derate (Amb) (W/°C) |
5.9m |
| hfe |
20 |
| Ic Max. (A) |
3 |
| Polarity |
NPN |
| Trans. Freq (Hz) Min. |
1.0M |
| @VCE (test) (V) |
4.0 |
| Oper. Temp (°C) Max. |
175 |
| @Ic (A) |
1 |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.6 W |
| Maximum Collector-Base Voltage |Vcb| |
120 V |
| Maximum Collector-Emitter Voltage |Vce| |
100 V |
| Maximum Collector Current |Ic max| |
3 A |
| Max. Operating Junction Temperature (Tj) |
200 °C |
| Transition Frequency (ft): |
1 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
20 |
| SKU |
83860 |