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2N2860
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2N2860

SKU: 2N2860
2N2860 Transistor Germanium PNP CASE: TO18 MAKE: Sylvania Semiconductors
Product specifications
Type Transistor Germanium PNP
Case TO18
Manufacturer Sylvania Semiconductors
Vbr CBO 18
Vbr CEO 7.0
Max. PD (W) 150m
C(ob) (F) 4.0p
Derate (Amb) (W/°C) 2.0m
hfe 40
Ic Max. (A) 150m
Polarity PNP
@VCE (test) (V) .40
Oper. Temp (°C) Max. 100
@Ic (A) 40m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 18 V
Maximum Collector-Emitter Voltage |Vce| 7 V
Maximum Collector Current |Ic max| 0.15 A
Max. Operating Junction Temperature (Tj) 100 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 580075
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