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2N2867
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2N2867

SKU: 2N2867
2N2867 Transistor Silicon NPN CASE: MT21 MAKE: USA Make
Product specifications
Type Transistor Silicon NPN
Case MT21
Manufacturer USA Make
Vbr CBO 120
Vbr CEO 80
Max. PD (W) 40
Max. hFE 120
Min hFE 40
Ic Max. (A) 2.0
@Ic (test) (A) 500m
Polarity NPN
R(sat) (Û) 750m
Derate Above 25°C 266m
Trans. Freq (Hz) Min. 20M
Oper. Temp (°C) Max. 175#
@VCE (V) 5.0i
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 170 pF
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 775535
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