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2N2879
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2N2879

SKU: 2N2879
2N2879 Transistor Silicon NPN CASE: TO62 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO62
Manufacturer Generic
Vbr CBO 100
Vbr CEO 80
Max. PD (W) 30
t(f) Max. (S) 80n
Max. hFE 60
Min hFE 20
Ic Max. (A) 5.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Tr Max. (s) 120n
Derate Above 25°C 300m
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 150 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 775530
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