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2N2887
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2N2887

SKU: 2N2887
2N2887 Transistor Silicon NPN CASE: TO61 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO61
Manufacturer Generic
Vbr CBO 100
Vbr CEO 80
Max. PD (W) 25
Max. hFE 80
Min hFE 15
Ic Max. (A) 1.2
@Ic (test) (A) 350m
Polarity NPN
R(sat) (Û) 1.2
Derate Above 25°C 142m
Oper. Temp (°C) Max. 175
@VCE (V) 28
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Collector Current |Ic max| 1.2 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 30 pF
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN 15
SKU 606005
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