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2N2906A
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2N2906A

SKU: 2N2906A
2N2906A is a PNP small-signal silicon switching transistor suited for general-purpose switching and amplification tasks. Packaged in a TO-18 (TO-206AA) metal can through-hole, it features VCEO 60 V, collector current 600 mA and total power dissipation 0.4 W at TA = 25°C and is qualified per MIL-PRF-19500/291.
Price:
£5.75 Inc. VAT (£4.79 Ex. VAT)
£5.75 Inc. VAT (£4.79 Ex. VAT)
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Datasheet
2N2906A Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO18
Manufacturer Microsemi Corporation
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 400m
C(ob) (F) 8.0p
t(on) Delay (S) 10n
Derate (Amb) (W/°C) 2.2m
t(f) Max. (S) 30n
hfe 40
Ic Max. (A) 600m
Icbo Max. @Vcb Max. (A) 10n
Polarity PNP
Tr Max. (s) 40n
t(stor) Max. (S) 80n
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 175
@Ic (A) 500m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 16805
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