The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N2912
View detailed images (12)

2N2912

SKU: 2N2912
2N2912 Transistor Germanium PNP CASE: TO8 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case TO8
Manufacturer Generic
Vbr CBO 15
Vbr CEO 5.0
Max. PD (W) 75
t(f) Max. (S) 2.0u
Max. hFE 800
Min hFE 200
Ic Max. (A) 25
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 10m
Polarity PNP
Tr Max. (s) 2.0u
R(sat) (Û) 20m
Derate Above 25°C 1.0
Trans. Freq (Hz) Min. 10M
Oper. Temp (°C) Max. 125
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 75 W
Maximum Collector-Base Voltage |Vcb| 15 V
Maximum Collector-Emitter Voltage |Vce| 5 V
Maximum Emitter-Base Voltage |Veb| 1 V
Maximum Collector Current |Ic max| 25 A
Max. Operating Junction Temperature (Tj) 110 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 200
SKU 775384
Back