The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N30

2N30

SKU: 2N30
2N30 Transistor Germanium PNP CASE: TO7 MAKE: General Electric
Product specifications
Type Transistor Germanium PNP
Case TO7
Manufacturer General Electric
Vbr CBO 30
Max. PD (W) 100m
hfe 17
Ic Max. (A) 7.0m
Polarity PNP
Trans. Freq (Hz) Min. 2.0M
@VCE (test) (V) 25
Oper. Temp (°C) Max. 60
@Ic (A) .50m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Collector Current |Ic max| 0.007 A
Max. Operating Junction Temperature (Tj) 100 °C
Collector Capacitance (Cc) 20 pF
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN 22
SKU 775279
Back