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2N3019S
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2N3019S

SKU: 2N3019S
2N3019S Transistor Silicon NPN CASE: TO39 MAKE: Motorola Semiconductor
Datasheet
2N3019S Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Motorola Semiconductor
Vbr CBO 140
Vbr CEO 80
Max. PD (W) 800m
C(ob) (F) 12p
Derate (Amb) (W/°C) 4.5m
hfe 80
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 10n
Polarity NPN
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 175
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 180 °C
Collector Capacitance (Cc) 25 pF
Transition Frequency (ft): 70 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 553939
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