2N3057A

2N3057A

SKU: 2N3057A
2N3057A Transistor Silicon NPN CASE: TO46 MAKE: Generic
Datasheet
2N3057A Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO46
Manufacturer Microsemi
Vbr CBO 140
Vbr CEO 80
Max. PD (W) 400m
C(ob) (F) 12p
Derate (Amb) (W/°C) 2.3m
hfe 80
Ic Max. (A) 1
Icbo Max. @Vcb Max. (A) .01u
Polarity NPN
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 175
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 140 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 12 pF
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 775160
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