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2N307B
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2N307B

SKU: 2N307B
2N307B Transistor Germanium PNP CASE: TO3 MAKE: Generic
Product specifications
Equivalent 2N307
Type Transistor Germanium PNP
Case TO3
Manufacturer Generic
Vbr CBO 35
Vbr CEO 35
Max. PD (W) 50
Max. hFE 35-
Min hFE 20
Ic Max. (A) 1.0
@Ic (test) (A) 200m
Icbo Max. @Vcb Max. (A) 15m
Polarity PNP
R(sat) (Û) 800m
Derate Above 25°C 200m
Trans. Freq (Hz) Min. 3.0k
Oper. Temp (°C) Max. 75
@VCE (V) 1.5
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 75 °C
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 775133
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