The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N3121

2N3121

SKU: 2N3121
2N3121 Transistor Silicon PNP CASE: TO18 MAKE: Generic
Datasheet
2N3121 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO18
Manufacturer Central Semiconductor
Vbr CBO 45
Vbr CEO 45
Max. PD (W) 360m
C(ob) (F) 10p
Derate (Amb) (W/°C) 2.0m
hfe 1.3
Ic Max. (A) 500m
Icbo Max. @Vcb Max. (A) 10n
Polarity PNP
@VCE (test) (V) 20
Oper. Temp (°C) Max. 200
@Ic (A) 50m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.36 W
Maximum Collector-Base Voltage |Vcb| 45 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.5 A
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 130 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 82550
Back