2N3150

SKU: 2N3150

2N3150 Transistor Silicon NPN CASE: TO61 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO61
Manufacturer	USA Make
Vbr CBO	100
Vbr CEO	100
Max. PD (W)	300
Min hFE	10
Ic Max. (A)	70
@Ic (test) (A)	50
Icbo Max. @Vcb Max. (A)	2.0m
Polarity	NPN
Tr Max. (s)	10u
R(sat) (Û)	30m
Derate Above 25°C	2.0
Trans. Freq (Hz) Min.	100k
Oper. Temp (°C) Max.	175
@VCE (V)	3.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	300 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	70 A
Max. Operating Junction Temperature (Tj)	200 °C
Transition Frequency (ft):	0.1 MHz
Forward Current Transfer Ratio (hFE), MIN	10
SKU	368287

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