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2N3156
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2N3156

SKU: 2N3156
2N3156 Transistor Germanium PNP CASE: MS7 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case MS7
Manufacturer Generic
Vbr CBO 80
Vbr CEO 55
Max. PD (W) 38
Max. hFE 180
Min hFE 60
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Tr Max. (s) 10u
R(sat) (Û) 500m
Derate Above 25°C 500m
Trans. Freq (Hz) Min. 15k
Oper. Temp (°C) Max. 100#
@VCE (V) 2.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 38 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 55 V
Maximum Emitter-Base Voltage |Veb| 30 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 100 °C
Transition Frequency (ft): 0.15 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 775064
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