2N315B

SKU: 2N315B

2N315B Transistor Germanium PNP CASE: TO5 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO5
Manufacturer	USA Make
Vbr CBO	30
Vbr CEO	20
Max. PD (W)	150m
Derate (Amb) (W/°C)	2.0m
hfe	20
Ic Max. (A)	500m
Icbo Max. @Vcb Max. (A)	2.0u
Polarity	PNP
@VCE (test) (V)	.20
Oper. Temp (°C) Max.	100
@Ic (A)	100m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	20 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	85 °C
Collector Capacitance (Cc)	25 pF
Transition Frequency (ft):	2 MHz
Forward Current Transfer Ratio (hFE), MIN	70
SKU	775059

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