2N316

SKU: 2N316

2N316 Transistor Germanium PNP CASE: TO5 MAKE: USA Make

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO5
Manufacturer	USA Make
Vbr CBO	20
Vbr CEO	10
Max. PD (W)	100m
C(ob) (F)	14p
Derate (Amb) (W/°C)	2.0m
hfe	30
Ic Max. (A)	200m
Icbo Max. @Vcb Max. (A)	2.0u
Polarity	PNP
Trans. Freq (Hz) Min.	12M
@VCE (test) (V)	.20
Oper. Temp (°C) Max.	100
@Ic (A)	200m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.1 W
Maximum Collector-Base Voltage \|Vcb\|	20 V
Maximum Collector-Emitter Voltage \|Vce\|	10 V
Maximum Emitter-Base Voltage \|Veb\|	20 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	85 °C
Collector Capacitance (Cc)	20 pF
Transition Frequency (ft):	5 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	775058

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