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2N3161
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2N3161

SKU: 2N3161
2N3161 Transistor Germanium PNP CASE: MS7 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case MS7
Manufacturer Generic
Vbr CBO 100
Vbr CEO 65
Max. PD (W) 38
Max. hFE 75
Min hFE 30
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100u
Polarity PNP
Tr Max. (s) 10u
R(sat) (Û) 470m
Derate Above 25°C 500m
Trans. Freq (Hz) Min. 10k
Oper. Temp (°C) Max. 100#
@VCE (V) 2.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 38 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 65 V
Maximum Emitter-Base Voltage |Veb| 30 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 100 °C
Transition Frequency (ft): 0.15 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 775056
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