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2N3170
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2N3170

SKU: 2N3170
2N3170 Transistor Silicon PNP CASE: TO53 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO53
Manufacturer Generic
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 85
Derate (Amb) (W/°C) 454m
Max. hFE 36
Min hFE 12
Ic Max. (A) 3.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 10m
Polarity PNP
R(sat) (Û) 750m
Trans. Freq (Hz) Min. 1.0M
Oper. Temp (°C) Max. 175#
@VCE (V) 3.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 85 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 12
SKU 775046
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