2N317A

SKU: 2N317A

2N317A Transistor Germanium PNP CASE: TO5 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO5
Manufacturer	Generic
Vbr CBO	25
Vbr CEO	10
Max. PD (W)	150m
Derate (Amb) (W/°C)	2.0m
hfe	20
Ic Max. (A)	500m
Icbo Max. @Vcb Max. (A)	2.0u
Polarity	PNP
@VCE (test) (V)	.25
Oper. Temp (°C) Max.	100
@Ic (A)	400m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	20 V
Maximum Collector-Emitter Voltage \|Vce\|	6 V
Maximum Emitter-Base Voltage \|Veb\|	20 V
Maximum Collector Current \|Ic max\|	0.4 A
Max. Operating Junction Temperature (Tj)	100 °C
Collector Capacitance (Cc)	20 pF
Transition Frequency (ft):	8 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	606022

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