The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2N3212

2N3212

SKU: 2N3212
2N3212 Transistor Germanium PNP CASE: TO37 MAKE: Generic
Product specifications
Type Transistor Germanium PNP
Case TO37
Manufacturer Generic
Vbr CBO 100
Vbr CEO 80
Max. PD (W) 14
Max. hFE 90
Min hFE 30
Ic Max. (A) 5.0
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity PNP
Tr Max. (s) 3.0u
R(sat) (Û) 100m
Derate Above 25°C 143m
Trans. Freq (Hz) Min. 600k
Oper. Temp (°C) Max. 125
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 14 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 2 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 100 °C
Transition Frequency (ft): 0.3 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 775013
Back