2N3229

SKU: 2N3229

2N3229 Transistor Silicon NPN CASE: TO62 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO62
Manufacturer	Generic
Vbr CBO	105
Vbr CEO	60
Max. PD (W)	17
Min hFE	5.0
Ic Max. (A)	2.5
@Ic (test) (A)	2.5
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
R(sat) (Û)	400m
Derate Above 25°C	100m
Trans. Freq (Hz) Min.	150M
Oper. Temp (°C) Max.	175
@VCE (V)	1.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	17 W
Maximum Collector-Base Voltage \|Vcb\|	105 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	2.5 A
Max. Operating Junction Temperature (Tj)	200 °C
Collector Capacitance (Cc)	20 pF
Transition Frequency (ft):	200 MHz
Forward Current Transfer Ratio (hFE), MIN	5
SKU	774993

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