| Type | Transistor Silicon NPN | |
| Case | TO61 | |
| Manufacturer | Generic | |
| Vbr CBO | 200 | |
| Vbr CEO | 200 | |
| Max. PD (W) | 200 | |
| t(f) Max. (S) | 6.0u | |
| Max. hFE | 40 | |
| Min hFE | 10 | |
| Ic Max. (A) | 30 | |
| @Ic (test) (A) | 20 | |
| Icbo Max. @Vcb Max. (A) | 2.0m | |
| Polarity | NPN | |
| Tr Max. (s) | 5.8u | |
| R(sat) (Û) | 75m | |
| Derate Above 25°C | 1.0 | |
| Oper. Temp (°C) Max. | 175# | |
| @VCE (V) | 3.0 | |
| Pinout Equivalence Number | 3-12 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 200 W | |
| Maximum Collector-Base Voltage |Vcb| | 200 V | |
| Maximum Collector-Emitter Voltage |Vce| | 200 V | |
| Maximum Collector Current |Ic max| | 30 A | |
| Max. Operating Junction Temperature (Tj) | 175 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 10 | |
| SKU | 774967 | |