2N327

SKU: 2N327

2N327 Transistor Silicon PNP CASE: TO5 MAKE: Raytheon Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO5
Manufacturer	Raytheon Semiconductor
Vbr CEO	40
Max. PD (W)	337m
C(ob) (F)	30p
Derate (Amb) (W/°C)	2.5m
hfe	14
Ic Max. (A)	50m
Polarity	PNP
Trans. Freq (Hz) Min.	.30M
@VCE (test) (V)	6.0i
Oper. Temp (°C) Max.	150
@Ic (A)	1.0m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.33 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	35 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	160 °C
Transition Frequency (ft):	0.1 MHz
Forward Current Transfer Ratio (hFE), MIN	10
SKU	116229

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