2N327B

SKU: 2N327B

2N327B Transistor Silicon PNP CASE: TO5 MAKE: Raytheon Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO5
Manufacturer	Raytheon Semiconductor
Vbr CBO	50
Vbr CEO	40
Max. PD (W)	386m
C(ob) (F)	70p-
Derate (Amb) (W/°C)	2.3m
hfe	14
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	1.0n
Polarity	PNP
Trans. Freq (Hz) Min.	200k-
@VCE (test) (V)	5.0
Oper. Temp (°C) Max.	200
@Ic (A)	3.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.1 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	20 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	18 pF
Transition Frequency (ft):	2 MHz
Forward Current Transfer Ratio (hFE), MIN	15
SKU	774953

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